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通过纳米级电沉积制备的半金属锑和半导体锑化铝的微观与电子结构:原位扫描探针研究

Microscopic and electronic structure of semimetallic Sb and Semiconducting AlSb fabricated by nanoscale electrodeposition: An in situ scanning probe investigation.

作者信息

Mann O, Aravinda C L, Freyland W

机构信息

Institute of Physical Chemistry, Karlsruhe University, Kaiserstrasse 12, 76128 Karlsruhe, Germany.

出版信息

J Phys Chem B. 2006 Nov 2;110(43):21521-7. doi: 10.1021/jp064384c.

DOI:10.1021/jp064384c
PMID:17064102
Abstract

The nanoscale electrocrystallization of pure Sb and the compound semiconductor AlSb on Au(111) has been studied by in situ scanning probe techniques (STM and STS) employing an ionic liquid electrolyte, {AlCl3-[C4mim]+Cl-} (1:1) containing SbCl3. The characteristic changes of the electronic structures with varying potentials have been probed for the first time by normalized differential conductance spectra, (dI/dU)/(I/U). In the underpotential deposition range of Sb the formation of two layers is observed. For the first monolayer a (square root 3 x square root 3)R30 degrees structure is determined from atomically resolved STM images. During the deposition and dissolution of the Sb monolayers characteristic wormlike or spinodal structures appear indicating surface alloying of antimony with the gold substrate. Under overpotential conditions two different Sb structures have been observed. If the deposition potential is continuously stepped to -0.1 V, Sb nanostripes form. On the other hand, randomly dispersed small clusters occur if the potential is jumped from 0.0 to -0.3 V vs Al/Al(III). Both modifications exhibit typical semimetallic behavior as shown by the STS spectra. At -1.1 V the cyclic voltammogram shows a clear reduction wave that is assigned to AlSb compound formation. Deposits in this potential range are characterized by a homogeneous distribution of clusters with diameters of approximately 20 nm. Conductance spectra of these clusters exhibit the main features of the electronic structure of the bulk semiconductor AlSb, with a band gap of 2.0 +/- 0.2 eV. Electrodeposition experiments on both sides of the compound deposition potential show a strong doping effect that is manifest in the corresponding conductance spectra.

摘要

利用包含SbCl3的离子液体电解质{AlCl3-[C4mim]+Cl-}(1:1),通过原位扫描探针技术(STM和STS)研究了纯Sb和化合物半导体AlSb在Au(111)上的纳米级电结晶。首次通过归一化微分电导谱(dI/dU)/(I/U)探测了电子结构随电位变化的特征变化。在Sb的欠电位沉积范围内,观察到形成了两层。对于第一个单层,从原子分辨的STM图像确定了一种(√3×√3)R30°结构。在Sb单层的沉积和溶解过程中,出现了特征性的蠕虫状或旋节线结构,表明锑与金基底发生了表面合金化。在过电位条件下,观察到两种不同的Sb结构。如果将沉积电位连续步进至-0.1V,则会形成Sb纳米条纹。另一方面,如果相对于Al/Al(III)将电位从0.0V跃变至-0.3V,则会出现随机分散的小簇。如STS光谱所示,这两种变体均表现出典型的半金属行为。在-1.1V时,循环伏安图显示出一个明显的还原波,该还原波归因于AlSb化合物的形成。在此电位范围内的沉积物的特征是直径约为20nm的簇均匀分布。这些簇的电导谱展现了体相半导体AlSb电子结构的主要特征,带隙为2.0±0.2eV。在化合物沉积电位两侧进行的电沉积实验显示出强烈的掺杂效应,这在相应的电导谱中表现明显。

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