Dou Xincun, Zhu Yonggang, Huang Xiaohu, Li Liang, Li Guanghai
Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanoechnology Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, People's Republic of China.
J Phys Chem B. 2006 Nov 2;110(43):21572-5. doi: 10.1021/jp064009k.
The influence of effective deposition potential on the orientation and diameter of Bi(1-x)Sbx alloy nanowire arrays by pulsed electrodeposition technique was reported. X-ray diffraction, field-emission scanning electron microscopy, and transmission electron microscopy analysis show that the orientation of the Bi(1-x)Sbx nanowires can be turned from the [110] to the [202] direction by increasing the effective deposition potential, and the nanowires fully fill in the pores of the AAM in the lower potential region, while in the higher potential region the nanowires partly fill the pores of the AAM. The origin of those phenomena and the growth mechanism of the nanowire are discussed together with composition analysis.
报道了通过脉冲电沉积技术有效沉积电位对Bi(1-x)Sbx合金纳米线阵列的取向和直径的影响。X射线衍射、场发射扫描电子显微镜和透射电子显微镜分析表明，通过提高有效沉积电位，Bi(1-x)Sbx纳米线的取向可以从[110]方向转变为[202]方向，并且在较低电位区域纳米线完全填充阳极氧化铝模板的孔，而在较高电位区域纳米线部分填充阳极氧化铝模板的孔。结合成分分析讨论了这些现象的起源以及纳米线的生长机制。
