Li Liang, Yang Youwen, Huang Xiaohu, Li Guanghai, Zhang Lide
Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, People's Republic of China.
J Phys Chem B. 2005 Jun 30;109(25):12394-8. doi: 10.1021/jp0511855.
Semiconductor ZnTe nanowire arrays have been synthesized by the pulsed electrochemical deposition from aqueous solutions into porous anodic alumina membranes. X-ray diffraction analyses show that the as-synthesized nanowires have a highly preferential orientation. Scanning electron microscopy, transmission electron microscopy, and high-resolution transmission electron microscopy indicate that high-filling, ordered, and single-crystalline nanowire arrays have been obtained. The optical absorption spectra of the nanowire arrays show that the optical absorption band edge of the ZnTe nanowire array exhibits a blue shift compared with that of bulk ZnTe. The growth mechanism and the electrochemical deposition process are discussed together with the chemical compositions analysis.
通过脉冲电化学沉积法，从水溶液中将半导体碲化锌纳米线阵列合成到多孔阳极氧化铝膜中。X射线衍射分析表明，所合成的纳米线具有高度择优取向。扫描电子显微镜、透射电子显微镜和高分辨率透射电子显微镜表明，已获得了高填充率、有序且单晶的纳米线阵列。纳米线阵列的光吸收光谱表明，与块状碲化锌相比，碲化锌纳米线阵列的光吸收带边呈现蓝移。结合化学成分分析，讨论了生长机理和电化学沉积过程。
