Robbie Kevin, Cui Yan, Elliott Chelsea, Kaminska Kate
Department of Physics, Queen's University, Kingston, Ontario, Canada.
Appl Opt. 2006 Nov 10;45(32):8298-303. doi: 10.1364/ao.45.008298.
Rugate filters are thin-film optical interference coatings with sinusoidal variation of the refractive index. Several of these filters were fabricated with glancing angle deposition, which exploits atomic competition during growth to create nanoporous materials with controllable effective refractive index. This method enables the fabrication of devices with almost arbitrary refractive index profiles varying between the ambient, 1.0, and the index of the film material, in this case silicon with an index of 4.0 (at 600 nm). As these filters are inherently porous, oxidation of the silicon can occur throughout the device layer, and here we study the intentional oxidation of silicon filters by high-temperature reaction with gaseous oxygen. We find that a significant portion of the silicon filter oxidizes in approximately 10 min when heated to 600 degrees C-650 degrees C in an oxygen environment; oxidation then continues slowly over several hours. The presence of water vapor has little apparent effect on the oxidation reaction, and attempts to oxidize with ozone at room temperature were unsuccessful. As silicon filters oxidize to become silica, spectral blueshifts and increased short-wavelength transmittance are observed. Measured and calculated transmittance spectra generally agree, although the lack of absorption and dispersion in the theoretical model limits detailed comparison.
rugate滤波器是一种折射率呈正弦变化的薄膜光学干涉涂层。其中一些滤波器是通过掠角沉积法制造的,该方法利用生长过程中的原子竞争来创建具有可控有效折射率的纳米多孔材料。这种方法能够制造出折射率分布几乎任意的器件,其折射率在环境折射率(1.0)和薄膜材料的折射率之间变化,在这种情况下,薄膜材料是折射率为4.0(在600nm处)的硅。由于这些滤波器本质上是多孔的,硅的氧化可以在整个器件层中发生,在这里我们研究通过与气态氧的高温反应对硅滤波器进行有意氧化。我们发现,当在氧气环境中加热到600℃-650℃时,硅滤波器的很大一部分在大约10分钟内氧化;然后氧化在几个小时内缓慢持续。水蒸气的存在对氧化反应几乎没有明显影响,并且在室温下用臭氧氧化的尝试未成功。随着硅滤波器氧化成二氧化硅,观察到光谱蓝移和短波长透过率增加。测量和计算的透过率光谱总体上一致,尽管理论模型中缺乏吸收和色散限制了详细比较。