Mkhoyan K A, Babinec T, Maccagnano S E, Kirkland E J, Silcox J
School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA.
Ultramicroscopy. 2007 Apr-May;107(4-5):345-55. doi: 10.1016/j.ultramic.2006.09.003. Epub 2006 Oct 16.
To identify major features in low electron energy loss spectra, the different excitations (bulk plasmons, interband transitions, surface plasmons, Cherenkov and surface guided modes) must be delineated from each other. In this paper, this process is achieved by noting the linear thickness dependence of bulk processes contrasted with the constant thickness behavior of surface excitations. An alternative approach of analyzing bulk plasmon-loss is also introduced. Using a new algorithm, the parameters of plasma generation-plasmon energy E(P,0), a damping parameter DeltaE(P) and the coefficient of the dispersion relation gamma were obtained from a single curve fitting on the example of Si. The ability to separate surface-losses from the rest of the data permitted identification of the fine structure of the surface-losses. The strong peak at 8.2 eV characteristic of non-radiative surface plasmon excitations was measured for Si. Analysis of surface excitations indicates that a 10ASiO2 surface coating layer is still present despite careful cleaning the specimen. Dielectric functions deduced from the EELS data prove to be considerably affected by the presence of the surface-losses for samples as thick as 800A.
为了识别低能量电子损失谱中的主要特征,必须将不同的激发(体等离子体激元、带间跃迁、表面等离子体激元、切伦科夫模和表面导模)相互区分开来。在本文中,通过注意体过程的线性厚度依赖性与表面激发的恒定厚度行为形成对比来实现这一过程。还介绍了一种分析体等离子体激元损失的替代方法。使用一种新算法,以硅为例,通过对单条曲线进行拟合,得到了等离子体产生的参数——等离子体能量E(P,0)、阻尼参数DeltaE(P)和色散关系系数γ。从其余数据中分离出表面损失的能力使得能够识别表面损失的精细结构。测量到硅在8.2 eV处有非辐射表面等离子体激元激发的强峰。对表面激发的分析表明,尽管对样品进行了仔细清洁,但仍存在10 Å的SiO₂表面涂层。从电子能量损失谱数据推导出的介电函数被证明对于厚度达800 Å的样品,会受到表面损失的显著影响。