基于LR 115型固体核径迹探测器对²²²Rn及其短寿命子体的部分灵敏度推导V函数。
Derivation of V function for LR 115 SSNTD from its partial sensitivity to 222Rn and its short-lived progeny.
作者信息
Leung S Y Y, Nikezic D, Yu K N
机构信息
Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Kowloon, Hong Kong.
出版信息
J Environ Radioact. 2007;92(1):55-61. doi: 10.1016/j.jenvrad.2006.09.006. Epub 2006 Nov 7.
Solid-state nuclear track detectors (SSNTDs) have been widely applied for measurements of environmental concentrations of 222Rn and its progeny. The V function for an SSNTD is important for understanding the track development in the SSNTD as well as for real life applications. The partial sensitivity rhoi of the LR 115 detector applied in the bare mode to 222Rn and its short-lived progeny is related to the equilibrium factor F through the proxy equilibrium factor Fp. On the other hand, rhoi is also dependent on the removed active layer thickness during chemical etching, which is related to the V function for the LR 115 detector. In the present paper, the experimentally obtained rhoi values of the LR 115 detector for different removed active layer thickness are used to derive the V function for the LR 115 SSNTD, which took the form of the Durrani--Green's function, i.e., [formula: see text] , with the best-fitted constants as a1=14.23; a2=0.48; a3=5.9 and a4=0.077 (a5=1).
固态核径迹探测器（SSNTDs）已被广泛应用于测量环境中222Rn及其子体的浓度。SSNTD的V函数对于理解SSNTD中的径迹发展以及实际应用都很重要。裸模式下应用的LR 115探测器对222Rn及其短寿命子体的部分灵敏度ρi通过代理平衡因子Fp与平衡因子F相关。另一方面，ρi还取决于化学蚀刻过程中去除的活性层厚度，这与LR 115探测器的V函数有关。在本文中，利用实验获得的不同去除活性层厚度下LR 115探测器的ρi值来推导LR 115 SSNTD的V函数，其形式为杜拉尼 - 格林函数，即[公式：见原文]，最佳拟合常数为a1 = 14.23；a2 = 0.48；a3 = 5.9和a4 = 0.077（a5 = 1）。
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