Sellier H, Lansbergen G P, Caro J, Rogge S, Collaert N, Ferain I, Jurczak M, Biesemans S
Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands.
Phys Rev Lett. 2006 Nov 17;97(20):206805. doi: 10.1103/PhysRevLett.97.206805. Epub 2006 Nov 16.
We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant isolated in the channel appear as resonances in the low temperature conductance at energies below the conduction band edge. We observe the two possible charge states successively occupied by spin-up and spin-down electrons under magnetic field. The first resonance is consistent with the binding energy of the neutral D0 state of an arsenic donor. The second resonance shows a reduced charging energy due to the electrostatic coupling of the charged D- state with electrodes. Excited states and Zeeman splitting under magnetic field present large energies potentially useful to build atomic scale devices.
我们报告了通过对从绝缘体上硅蚀刻的栅控纳米线的源极和漏极之间进行共振隧穿，来对硅中单个掺杂原子进行光谱分析的研究。在沟道中孤立的这种掺杂剂的电子态，在低于导带边缘的能量下，表现为低温电导中的共振。我们观察到在磁场下，自旋向上和自旋向下的电子相继占据的两种可能的电荷态。第一个共振与砷施主的中性D0态的结合能一致。第二个共振显示，由于带电D-态与电极的静电耦合，充电能量降低。磁场下的激发态和塞曼分裂呈现出较大的能量，这对于构建原子尺度的器件可能是有用的。
