Otsuka Tomohiro, Abe Takaya, Kitada Takahito, Ito Norikazu, Tanaka Taketoshi, Nakahara Ken
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan.
Center for Spintronics Research Network, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan.
Sci Rep. 2020 Sep 22;10(1):15421. doi: 10.1038/s41598-020-72269-z.
GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation of quantum dots in the conduction channel near the depletion of the 2-dimensional electron gas (2DEG). Multiple quantum dots are formed in the disordered potential induced by impurities in the FET conduction channel. We also measure the gate insulator dependence of the transport properties. These results can be utilized for the development of quantum dot devices utilizing GaN/AlGaN heterostructures and evaluation of the impurities in GaN/AlGaN FET channels.
氮化镓及其异质结构在凝聚态物理科学和电子器件应用中具有吸引力。我们在低温下测量了氮化镓/铝镓氮场效应晶体管（FET）中的电子输运。我们观察到在二维电子气（2DEG）耗尽附近的传导通道中形成了量子点。在FET传导通道中由杂质诱导的无序势中形成了多个量子点。我们还测量了输运性质对栅极绝缘体的依赖性。这些结果可用于利用氮化镓/铝镓氮异质结构开发量子点器件以及评估氮化镓/铝镓氮FET通道中的杂质。
