通过分子场效应实现单硅原子的电子开关

Electronic switching of single silicon atoms by molecular field effects.

作者信息

Harikumar Krishnan R, Polanyi John C, Sloan Peter A, Ayissi Serge, Hofer Werner A

机构信息

Department of Chemistry and Institute of Optical Sciences, University of Toronto, 80 St. George Street, Toronto, Ontario, M5S 3H6 Canada.

出版信息

J Am Chem Soc. 2006 Dec 27;128(51):16791-7. doi: 10.1021/ja062874c.

DOI:10.1021/ja062874c

PMID:17177429

Abstract

We have observed on-off switching of scanning tunneling microscope current flow to silicon adatoms of the Si(111)-(7 x 7) surface that are enclosed within a bistable dimeric corral of self-assembled chlorododecane molecules. These thermally activated oscillations amounted to an order of magnitude change in the current. Theory showed that small changes in molecular configuration could cause alterations in the corralled adatom's electronic energy by as much as 1 eV due to local field effects, accounting for the observed current switching.

摘要

我们观察到，扫描隧道显微镜电流流向Si(111)-(7×7)表面的硅吸附原子会出现通断切换，这些硅吸附原子被封装在由自组装的氯十二烷分子构成的双稳态二聚体围栏内。这些热激活振荡导致电流发生了一个数量级的变化。理论表明，由于局部场效应，分子构型的微小变化可能会使被围栏的吸附原子的电子能量改变多达1 eV，这解释了所观察到的电流切换现象。