垂直排列的碳纳米管阵列在室温下呈现肖特基行为。

Vertically aligned carbon-nanotube arrays showing Schottky behavior at room temperature.

作者信息

Jung Seung-Ho, Jeong Soo-Hwan, Kim Sang-Uck, Hwang Sun-Kyu, Lee Pyung-Soo, Lee Kun-Hong, Ko Ju-Hye, Bae Eunju, Kang Donghun, Park Wanjun, Oh Hwangyou, Kim Ju-Jin, Kim Hyungseok, Park Chan-Gyung

机构信息

Department of Chemical Engineering, Computer & Electrical Engineering Division, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea.

出版信息

Small. 2005 May;1(5):553-9. doi: 10.1002/smll.200400114.

DOI:10.1002/smll.200400114

PMID:17193485

Abstract

Vertically aligned carbon-nanotube (CNT) arrays were fabricated in the thin-film anodic aluminum oxide (AAO) templates on silicon wafers utilizing a niobium (Nb) thin film as the source electrode. The average diameter of the CNTs was 25 nm, and the number density was 3 x 10(10) cm(-2). The CNT arrays synthesized at 700 degrees C and above exhibited Schottky behavior even at 300 K, with energy gaps between 0.2 eV and 0.3 eV. However, individual CNTs obtained by removal of the template behaved as resistors at 300 K. The CNT/Nb oxide/Nb junction is thought to be responsible for the Schottky behavior. This structure can be a useful cornerstone in the fabrication of nanotransistors operating at room temperature.

摘要

利用铌（Nb）薄膜作为源电极，在硅片上的薄膜阳极氧化铝（AAO）模板中制备了垂直排列的碳纳米管（CNT）阵列。碳纳米管的平均直径为25纳米，数密度为3×10¹⁰厘米⁻²。在700摄氏度及以上温度合成的碳纳米管阵列即使在300 K时也表现出肖特基行为，能隙在0.2电子伏特至0.3电子伏特之间。然而，通过去除模板得到的单个碳纳米管在300 K时表现为电阻器。碳纳米管/氧化铌/铌结被认为是肖特基行为的原因。这种结构可能是制造室温下工作的纳米晶体管的有用基石。