Zhan Jinhua, Bando Yoshio, Hu Junqing, Xu Fangfang, Golberg Dmitri
Advanced Materials Laboratory, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan.
Small. 2005 Aug;1(8-9):883-8. doi: 10.1002/smll.200500022.
Zigzag and helical beta-Ga(2)O(3) one-dimensional nanostructures were produced by thermal evaporation of gallium oxide in the presence of gallium nitride. High-resolution TEM analysis indicates that each individual zigzag nanostructure has a periodic arrangement of three distinct blocks: two structurally perfect blocks mirrored with respect to each other on the (002) plane, and one stacking-fault-rich block sandwiched between them. In a zigzag nanostructure, the growth orientation of a beta-Ga(2)O(3) crystal changes alternately in three blocks. The zigzag nanostructure as a whole has the [001] axial direction. In addition to zigzag nanostructures, single-crystalline helical nanowires were also obtained.
通过在氮化镓存在的情况下热蒸发氧化镓制备了之字形和螺旋形β-Ga₂O₃一维纳米结构。高分辨率透射电子显微镜分析表明,每个单独的之字形纳米结构都有三个不同块的周期性排列:两个在(002)平面上相互镜像的结构完美块,以及夹在它们之间的一个富含堆垛层错的块。在之字形纳米结构中,β-Ga₂O₃晶体的生长取向在三个块中交替变化。整个之字形纳米结构具有[001]轴向。除了之字形纳米结构外,还获得了单晶螺旋纳米线。