单晶氮化镓纳米线。

Single crystal GaN nanowires.

作者信息

Deepak F L, Govindaraj A, Rao C N

机构信息

Chemistry and Physics of Materials Unit, CSIR Centre of Excellence in Chemistry, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P.O., Bangalore 560 064, India.

出版信息

J Nanosci Nanotechnol. 2001 Sep;1(3):303-8. doi: 10.1166/jnn.2001.041.

DOI:10.1166/jnn.2001.041

PMID:12914067

Abstract

Single crystal gallium nitride nanowires have been obtained by heating gallium acetylacetonate in the presence of carbon nanotubes or activated carbon in NH3 vapor at 910 degrees C. GaN nanowires also were obtained when the reaction of gallium acetylacetonate with NH3 was carried out over catalytic Fe/Ni particles dispersed over silica. The former procedure with carbon nanotubes is preferable because it avoids the presence of metal particles in the nanowire bundles.

摘要

通过在氨气蒸汽中于910摄氏度下在碳纳米管或活性炭存在的情况下加热乙酰丙酮镓，已获得单晶氮化镓纳米线。当乙酰丙酮镓与氨气在分散于二氧化硅上的催化性铁/镍颗粒上进行反应时，也可获得氮化镓纳米线。使用碳纳米管的前一种方法更可取，因为它避免了纳米线束中存在金属颗粒。