一维层状硫化镓纳米结构的汽-固生长。

Vapor-solid growth of one-dimensional layer-structured gallium sulfide nanostructures.

机构信息

Wuhan National Laboratory for Optoelectronics and College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, PR China.

出版信息

ACS Nano. 2009 May 26;3(5):1115-20. doi: 10.1021/nn900133f.

DOI:10.1021/nn900133f

PMID:19354225

Abstract

Gallium sulfide (GaS) is a wide direct bandgap semiconductor with uniform layered structure used in photoelectric devices, electrical sensors, and nonlinear optical applications. We report here the controlled synthesis of various high-quality one-dimensional GaS nanostructures (thin nanowires, nanobelts, and zigzag nanobelts) as well as other kinds of GaS products (microbelts, hexagonal microplates, and GaS/Ga(2)O(3) heterostructured nanobelts) via a simple vapor-solid method. The morphology and structures of the products can be easily controlled by substrate temperature and evaporation source. Optical properties of GaS thin nanowires and nanobelts were investigated and both show an emission band centered at 580 nm.

摘要

硫化镓 (GaS) 是一种具有均匀层状结构的宽直接能隙半导体，用于光电设备、电传感器和非线性光学应用。我们在此报告通过简单的气-固方法控制合成各种高质量的一维 GaS 纳米结构（细纳米线、纳米带和锯齿形纳米带）以及其他类型的 GaS 产物（微带、六方微板和 GaS/Ga(2)O(3) 异质结构纳米带）。通过改变衬底温度和蒸发源，可以很容易地控制产物的形貌和结构。研究了 GaS 薄纳米线和纳米带的光学性质，它们都显示出一个中心位于 580nm 的发射带。