Li Yan, Ren Jujie, Nakajima Hizuru, Soh Nobuaki, Nakano Koji, Imato Toshihiko
Department of Applied Chemistry, Graduate School of Engineering, Kyushu University, Fukuoka, Japan.
Anal Sci. 2007 Jan;23(1):31-8. doi: 10.2116/analsci.23.31.
A simple and novel method for the determination of an IgE antibody based on a surface plasmon resonance immunosensor for the diagnosis of an allergy is described. The method involves the use of an anti-IgE(D) antibody and an anti-IgE(H) antibody, which reacts with the Ce2 domain and the Ce3 domain of the IgE antibody. The anti-IgE(D) antibody was immobilized on the gold surface of a sensor chip by physical adsorption. An IgE antibody sample was incubated by adding it to an anti-IgE(H) antibody solution to form an anti-IgE(H) immunocomplex through a reaction of the Ce3 domain of the IgE antibody. The incubated solution was introduced onto the sensor chip and the immunocomplex of the IgE-anti-IgE(H) then reacted with the anti-IgE(D) antibody immobilized on the sensor chip through the Ce2 domain of the IgE antibody part of the IgE-anti-IgE(H) immunocomplex. The detection limit of the present method for the determination of the IgE antibody was about 10 ppb. The affinity constants for the anti-IgE(H) antibody immunocomplex with the IgE antibody in solution and that of the anti-IgE(H) antibody immunocomplex with the IgE antibody immobilized on the sensor chip by a biotin-streptavidin interaction were estimated to be 4.1 x 10(7) M(-1) and 5.8 x 10(6) M(-1), respectively. The affinity constant for the immunocomplex of the anti-IgE(H) antibody with the IgE antibody with the anti-IgE(D) immobilized on the sensor chip was estimated to be 4.9 x 10(7) M(-1), 20-times larger than the affinity constant for the IgE antibody immunocomplex with the anti-IgE(D) antibody immobilized on the sensor chip, based on a direct immunoassay method of the IgE antibody under the same experimental conditions.
描述了一种基于表面等离子体共振免疫传感器测定IgE抗体以诊断过敏的简单新颖方法。该方法涉及使用抗IgE(D)抗体和抗IgE(H)抗体,它们分别与IgE抗体的Ce2结构域和Ce3结构域发生反应。抗IgE(D)抗体通过物理吸附固定在传感器芯片的金表面上。将IgE抗体样品加入抗IgE(H)抗体溶液中孵育,通过IgE抗体的Ce3结构域反应形成抗IgE(H)免疫复合物。将孵育后的溶液引入传感器芯片,然后IgE - 抗IgE(H)免疫复合物通过IgE - 抗IgE(H)免疫复合物中IgE抗体部分的Ce2结构域与固定在传感器芯片上的抗IgE(D)抗体发生反应。本方法测定IgE抗体的检测限约为10 ppb。溶液中抗IgE(H)抗体免疫复合物与IgE抗体以及通过生物素 - 链霉亲和素相互作用固定在传感器芯片上的抗IgE(H)抗体免疫复合物与IgE抗体的亲和常数估计分别为4.1×10⁷ M⁻¹和5.8×10⁶ M⁻¹。基于相同实验条件下IgE抗体的直接免疫测定方法,抗IgE(H)抗体与IgE抗体的免疫复合物和固定在传感器芯片上的抗IgE(D)抗体的亲和常数估计为4.9×10⁷ M⁻¹,比IgE抗体免疫复合物与固定在传感器芯片上的抗IgE(D)抗体的亲和常数大20倍。