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使用具有不同活性识别位点的两种抗IgE抗体进行IgE分析的表面等离子体共振免疫传感器。

Surface plasmon resonance immunosensor for IgE analysis using two types of anti-IgE antibodies with different active recognition sites.

作者信息

Li Yan, Ren Jujie, Nakajima Hizuru, Soh Nobuaki, Nakano Koji, Imato Toshihiko

机构信息

Department of Applied Chemistry, Graduate School of Engineering, Kyushu University, Fukuoka, Japan.

出版信息

Anal Sci. 2007 Jan;23(1):31-8. doi: 10.2116/analsci.23.31.

Abstract

A simple and novel method for the determination of an IgE antibody based on a surface plasmon resonance immunosensor for the diagnosis of an allergy is described. The method involves the use of an anti-IgE(D) antibody and an anti-IgE(H) antibody, which reacts with the Ce2 domain and the Ce3 domain of the IgE antibody. The anti-IgE(D) antibody was immobilized on the gold surface of a sensor chip by physical adsorption. An IgE antibody sample was incubated by adding it to an anti-IgE(H) antibody solution to form an anti-IgE(H) immunocomplex through a reaction of the Ce3 domain of the IgE antibody. The incubated solution was introduced onto the sensor chip and the immunocomplex of the IgE-anti-IgE(H) then reacted with the anti-IgE(D) antibody immobilized on the sensor chip through the Ce2 domain of the IgE antibody part of the IgE-anti-IgE(H) immunocomplex. The detection limit of the present method for the determination of the IgE antibody was about 10 ppb. The affinity constants for the anti-IgE(H) antibody immunocomplex with the IgE antibody in solution and that of the anti-IgE(H) antibody immunocomplex with the IgE antibody immobilized on the sensor chip by a biotin-streptavidin interaction were estimated to be 4.1 x 10(7) M(-1) and 5.8 x 10(6) M(-1), respectively. The affinity constant for the immunocomplex of the anti-IgE(H) antibody with the IgE antibody with the anti-IgE(D) immobilized on the sensor chip was estimated to be 4.9 x 10(7) M(-1), 20-times larger than the affinity constant for the IgE antibody immunocomplex with the anti-IgE(D) antibody immobilized on the sensor chip, based on a direct immunoassay method of the IgE antibody under the same experimental conditions.

摘要

描述了一种基于表面等离子体共振免疫传感器测定IgE抗体以诊断过敏的简单新颖方法。该方法涉及使用抗IgE(D)抗体和抗IgE(H)抗体,它们分别与IgE抗体的Ce2结构域和Ce3结构域发生反应。抗IgE(D)抗体通过物理吸附固定在传感器芯片的金表面上。将IgE抗体样品加入抗IgE(H)抗体溶液中孵育,通过IgE抗体的Ce3结构域反应形成抗IgE(H)免疫复合物。将孵育后的溶液引入传感器芯片,然后IgE - 抗IgE(H)免疫复合物通过IgE - 抗IgE(H)免疫复合物中IgE抗体部分的Ce2结构域与固定在传感器芯片上的抗IgE(D)抗体发生反应。本方法测定IgE抗体的检测限约为10 ppb。溶液中抗IgE(H)抗体免疫复合物与IgE抗体以及通过生物素 - 链霉亲和素相互作用固定在传感器芯片上的抗IgE(H)抗体免疫复合物与IgE抗体的亲和常数估计分别为4.1×10⁷ M⁻¹和5.8×10⁶ M⁻¹。基于相同实验条件下IgE抗体的直接免疫测定方法,抗IgE(H)抗体与IgE抗体的免疫复合物和固定在传感器芯片上的抗IgE(D)抗体的亲和常数估计为4.9×10⁷ M⁻¹,比IgE抗体免疫复合物与固定在传感器芯片上的抗IgE(D)抗体的亲和常数大20倍。

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