Chen Changxin, Zhang Yafei
National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Institute of Micro and Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200030, PR China.
J Nanosci Nanotechnol. 2006 Dec;6(12):3789-93. doi: 10.1166/jnn.2006.626.
Field-effect transistors (FETs) with multiple channels of single-wall carbon nanotubes (SWCNTs) have been constructed. SWCNT channels of the FETs are dispersedly aligned between the source and the drain by electric-field manipulation of surface decorated SWCNTs. The obtained multichanneled FETs not only can meet the requirement of large output current and high transconductance, but also manifested good reliability and applicability. It is found that the transconductance of the multi-channel FET has an almost linear dependency on the SWCNT channel number, which opens up a promising way to tune the transconductance of FETs by controlling the channel number.
具有多通道单壁碳纳米管（SWCNT）的场效应晶体管（FET）已被构建出来。通过对表面修饰的单壁碳纳米管进行电场操纵，场效应晶体管的单壁碳纳米管通道在源极和漏极之间分散排列。所获得的多通道场效应晶体管不仅能够满足大输出电流和高跨导的要求，还表现出良好的可靠性和适用性。研究发现，多通道场效应晶体管的跨导几乎与单壁碳纳米管通道数量呈线性相关，这为通过控制通道数量来调节场效应晶体管的跨导开辟了一条有前景的途径。
