Nakashima Yasuhiro, Ohno Yutaka, Kishimoto Shigeru, Okochi Mina, Honda Hiroyuki, Mizutani Takashi
Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusaku, Nagoya 464-8603, Japan.
J Nanosci Nanotechnol. 2010 Jun;10(6):3805-9. doi: 10.1166/jnn.2010.1983.
Fabrication process of the carbon nanotube (CNT) field effect transistors (FETs) for biosensors was studied. Atomic layer deposition (ALD) of HfO2 was applied to the deposition of the passivation/gate insulator film. The CNT-FETs did not show the drain current degradation after ALD passivation even though the passivation by Si3N4 deposited by plasma-enhanced chemical vapor deposition (PECVD) resulted in a significant drain current decrease. This indicates the advantage of the present ALD technique in terms of the damage suppression. The biosensing operation was confirmed using thus fabricated CNT-FETs.
研究了用于生物传感器的碳纳米管（CNT）场效应晶体管（FET）的制造工艺。采用HfO₂的原子层沉积（ALD）来沉积钝化/栅极绝缘膜。即使通过等离子体增强化学气相沉积（PECVD）沉积的Si₃N₄进行钝化会导致漏极电流显著降低，但CNT-FET在ALD钝化后并未出现漏极电流退化。这表明了当前ALD技术在抑制损伤方面的优势。使用如此制造的CNT-FET确认了生物传感操作。
