Albrecht Peter M, Lyding Joseph W
Department of Electrical and Computer Engineering, Beckman Institute for Advanced Science and Technology, University of Illinois, Urbana, IL 61801, USA.
Small. 2007 Jan;3(1):146-52. doi: 10.1002/smll.200600326.
Ultrahigh-vacuum (UHV) scanning tunneling microscopy (STM) can be used for the manipulation of individual atoms and molecules into complex arrangements for sensitive electrical and structural characterization. However, the systematic UHV STM manipulation of single-walled carbon nanotubes (SWNTs), high-aspect-ratio molecular wires derived from graphene that exist in both semiconducting and metallic forms, has yet to be reported. In this work, we demonstrate the room-temperature lateral manipulation of approximately 1-nm-diameter SWNTs on UHV-prepared, hydrogen-passivated Si(100) surfaces. We show the reproducible actuation of SWNTs having lengths as small as 13 nm, along with the partial division of a two-tube bundle. Moreover, UHV STM desorption of H at the SWNT/Si interface is introduced as a means of locally strengthening the interaction between the tube and the surface. The UHV STM manipulation scheme described here is potentially extensible to the orientational control of SWNTs interfaced with atomically clean semiconducting surfaces, such as InAs(110), GaAs(110), and unpassivated Si(100), for which first-principles calculations based on density functional theory have been reported recently in the literature.
超高真空（UHV）扫描隧道显微镜（STM）可用于将单个原子和分子操纵成复杂排列，以进行灵敏的电学和结构表征。然而，对于单壁碳纳米管（SWNTs）这种由石墨烯衍生而来的具有高纵横比的分子线，其存在半导体和金属两种形式，尚未有关于在超高真空下对其进行系统的STM操纵的报道。在这项工作中，我们展示了在超高真空制备的、氢钝化的Si(100)表面上对直径约为1纳米的单壁碳纳米管进行室温横向操纵。我们展示了长度小至13纳米的单壁碳纳米管的可重复驱动，以及对双管束的部分分离。此外，引入超高真空STM在单壁碳纳米管/硅界面处对氢的解吸，作为局部增强碳纳米管与表面之间相互作用的一种手段。这里描述的超高真空STM操纵方案有可能扩展到与原子级清洁的半导体表面（如InAs(110)、GaAs(110)和未钝化的Si(100)）界面处的单壁碳纳米管的取向控制，最近文献中已报道了基于密度泛函理论的第一性原理计算。
