MacLean K, Amasha S, Radu Iuliana P, Zumbühl D M, Kastner M A, Hanson M P, Gossard A C
Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
Phys Rev Lett. 2007 Jan 19;98(3):036802. doi: 10.1103/PhysRevLett.98.036802. Epub 2007 Jan 16.
We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The tunneling process is shown to be elastic, and a model describing tunneling in terms of the dot energy relative to the height of the tunnel barrier quantitatively describes the measurements.
我们展示了利用量子点接触电荷传感器获得的电子进出量子点隧穿速率的测量结果。隧穿速率表现出对漏源偏置电压和柱塞栅极电压的指数依赖性。隧穿过程被证明是弹性的，并且一个根据量子点能量相对于隧穿势垒高度来描述隧穿的模型定量地描述了这些测量结果。
