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动态单电子晶体管的受控发射时间统计

Controlled emission time statistics of a dynamic single-electron transistor.

作者信息

Brange Fredrik, Schmidt Adrian, Bayer Johannes C, Wagner Timo, Flindt Christian, Haug Rolf J

机构信息

Department of Applied Physics, Aalto University, 00076 Aalto, Finland.

Institut für Festkörperphysik, Leibniz Universität Hannover, Hannover, Germany.

出版信息

Sci Adv. 2021 Jan 6;7(2). doi: 10.1126/sciadv.abe0793. Print 2021 Jan.

Abstract

Quantum technologies involving qubit measurements based on electronic interferometers rely critically on accurate single-particle emission. However, achieving precisely timed operations requires exquisite control of the single-particle sources in the time domain. Here, we demonstrate accurate control of the emission time statistics of a dynamic single-electron transistor by measuring the waiting times between emitted electrons. By ramping up the modulation frequency, we controllably drive the system through a crossover from adiabatic to nonadiabatic dynamics, which we visualize by measuring the temporal fluctuations at the single-electron level and explain using detailed theory. Our work paves the way for future technologies based on the ability to control, transmit, and detect single quanta of charge or heat in the form of electrons, photons, or phonons.

摘要

基于电子干涉仪的量子比特测量的量子技术严重依赖于精确的单粒子发射。然而,实现精确的定时操作需要在时域中对单粒子源进行精确控制。在这里,我们通过测量发射电子之间的等待时间,展示了对动态单电子晶体管发射时间统计的精确控制。通过提高调制频率,我们可控地驱动系统从绝热动力学过渡到非绝热动力学,我们通过测量单电子水平的时间波动来直观展示这一过程,并使用详细的理论进行解释。我们的工作为未来基于以电子、光子或声子形式控制、传输和检测单个电荷或热量量子的技术铺平了道路。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/eebd/7787478/cdecb520a2b9/abe0793-F1.jpg

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