Wu Yu, Toccoli Tullio, Koch Norbert, Iacob Erica, Pallaoro Alessia, Rudolf Petra, Iannotta Salvatore
Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, NL-9747 AG, Groningen, The Netherlands.
Phys Rev Lett. 2007 Feb 16;98(7):076601. doi: 10.1103/PhysRevLett.98.076601. Epub 2007 Feb 13.
The key role of the pentacene kinetic energy (Ek) in the early stages of growth on SiOx/Si is demonstrated: islands with smooth borders and increased coalescence differ remarkably from fractal-like thermal growth. Increasing Ek to 6.4 eV, the morphology evolves towards higher density of smaller islands. At higher coverage, coalescence grows with Ek up to a much more uniform, less defected monolayer. The growth, interpreted by the diffusion mediated model, shows the critical nucleus changing from 3 to 2 pentacene for Ek>5-6 eV. Optimal conditions to produce single crystalline films are envisaged.
