Kushto Gary P, Watkins Neil J, Mäkinen Antti J, Kafafi Zakya H
Optical Sciences Division, U.S. Naval Research Laboratory, Washington, DC 20375, USA. gary.kushto@ nrl.navy.mil
J Phys Chem B. 2007 May 31;111(21):5794-802. doi: 10.1021/jp067006g. Epub 2007 May 8.
The electronic structures of two series of end-capped thiophene oligomers, one set containing the electron-deficient dimesitylboryl end-cap and one containing the electron-rich triaryl amine end-cap, have been modeled using semiempirical quantum chemical calculations and the results used to assign features in the photoemission spectra of the materials in the condensed phase. For the thiophene oligomers end-capped with the electron-deficient dimesitylboryl moieties, the energy of the occupied frontier orbitals is largely governed by pi-type orbitals of the thiophene repeat units in the oligothiophene main chain. Conversely, in oligomers end-capped with electron-rich triarylamine moieties, the occupied frontier orbital energies are largely governed by orbital states of heavily mixed character associated with thiophene pi-type systems and the low-lying nitrogen lone pairs of end capping groups.
两个系列的封端噻吩低聚物的电子结构已通过半经验量子化学计算进行了建模,其中一组含有缺电子的二甲基硼基封端,另一组含有富电子的三芳基胺封端,计算结果用于确定凝聚相中这些材料的光电子能谱特征。对于用缺电子的二甲基硼基部分封端的噻吩低聚物,占据前沿轨道的能量在很大程度上由低聚噻吩主链中噻吩重复单元的π型轨道决定。相反,在用富电子的三芳基胺部分封端的低聚物中,占据前沿轨道的能量在很大程度上由与噻吩π型体系和封端基团的低位氮孤对相关联的高度混合特征的轨道状态决定。