Borghetti D, Pizzanelli C, Maritato P, Fabbrini M, Jensen S, Iudice A, Murri L, Sartucci F
Department of Neuroscience, Clinical Neurology, Pisa University School of Medicine, Via Roma, 67, 56126 Pisa, Italy.
Brain Res Bull. 2007 Jun 15;73(1-3):81-5. doi: 10.1016/j.brainresbull.2007.02.004. Epub 2007 Mar 2.
It is well known that some epileptic patients does not respond to conventional treatments, despite multiple combination of antiepileptic drugs, and they are therefore considered drug-resistant. For these patients, vagal nerve stimulation (VNS) represents a successful alternative to traditional therapy, and it is generally well tolerated; beside benefits on seizure frequency, VNS showed positive effects on cognition and mood. Aim of this study was to investigate short-term memory changes in a group of 12 patients implanted with VNS, through Mismatch Negativity wave (MMN). After 1 year of follow-up, MMN latencies and amplitudes did not show significant changes following VNS implantation, independently on current intensity, as compared with pre-implantation values. In two patients, MMN values, which were abnormal before VNS implantation, showed a major reduction in latency and an increase in amplitude after implantation, suggesting a likely positive effect of VNS on pre-attentive processes investigated by MMN.
众所周知,一些癫痫患者尽管使用了多种抗癫痫药物联合治疗,仍对传统治疗无反应,因此被认为是耐药性的。对于这些患者,迷走神经刺激(VNS)是传统治疗的一种成功替代方法,并且通常耐受性良好;除了对癫痫发作频率有好处外,VNS对认知和情绪也有积极影响。本研究的目的是通过失配负波(MMN)研究一组12例植入VNS的患者的短期记忆变化。随访1年后,与植入前的值相比,VNS植入后MMN的潜伏期和波幅未显示出显著变化,与电流强度无关。在两名患者中,VNS植入前异常的MMN值在植入后潜伏期大幅缩短,波幅增加,提示VNS可能对MMN所研究的前注意过程有积极作用。