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植入迷走神经刺激器的耐药性癫痫患者的失匹配负波分析

Mismatch negativity analysis in drug-resistant epileptic patients implanted with vagus nerve stimulator.

作者信息

Borghetti D, Pizzanelli C, Maritato P, Fabbrini M, Jensen S, Iudice A, Murri L, Sartucci F

机构信息

Department of Neuroscience, Clinical Neurology, Pisa University School of Medicine, Via Roma, 67, 56126 Pisa, Italy.

出版信息

Brain Res Bull. 2007 Jun 15;73(1-3):81-5. doi: 10.1016/j.brainresbull.2007.02.004. Epub 2007 Mar 2.

Abstract

It is well known that some epileptic patients does not respond to conventional treatments, despite multiple combination of antiepileptic drugs, and they are therefore considered drug-resistant. For these patients, vagal nerve stimulation (VNS) represents a successful alternative to traditional therapy, and it is generally well tolerated; beside benefits on seizure frequency, VNS showed positive effects on cognition and mood. Aim of this study was to investigate short-term memory changes in a group of 12 patients implanted with VNS, through Mismatch Negativity wave (MMN). After 1 year of follow-up, MMN latencies and amplitudes did not show significant changes following VNS implantation, independently on current intensity, as compared with pre-implantation values. In two patients, MMN values, which were abnormal before VNS implantation, showed a major reduction in latency and an increase in amplitude after implantation, suggesting a likely positive effect of VNS on pre-attentive processes investigated by MMN.

摘要

众所周知,一些癫痫患者尽管使用了多种抗癫痫药物联合治疗,仍对传统治疗无反应,因此被认为是耐药性的。对于这些患者,迷走神经刺激(VNS)是传统治疗的一种成功替代方法,并且通常耐受性良好;除了对癫痫发作频率有好处外,VNS对认知和情绪也有积极影响。本研究的目的是通过失配负波(MMN)研究一组12例植入VNS的患者的短期记忆变化。随访1年后,与植入前的值相比,VNS植入后MMN的潜伏期和波幅未显示出显著变化,与电流强度无关。在两名患者中,VNS植入前异常的MMN值在植入后潜伏期大幅缩短,波幅增加,提示VNS可能对MMN所研究的前注意过程有积极作用。

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