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氙气中双光子电离至双芯孔态。

Double photoionization into double core-hole states in Xe.

作者信息

Hikosaka Y, Lablanquie P, Penent F, Kaneyasu T, Shigemasa E, Eland J H D, Aoto T, Ito K

机构信息

UVSOR Facility, Institute for Molecular Science, Okazaki 444-8585, Japan.

出版信息

Phys Rev Lett. 2007 May 4;98(18):183002. doi: 10.1103/PhysRevLett.98.183002. Epub 2007 May 2.

Abstract

Double photoionization (DPI) leading to double core-hole states of Xe2+ 4d(-2) has been studied using a magnetic bottle time-of-flight spectrometer. The assignments of the Xe2+ 4d(-2) states are confirmed by the Auger lines extracted from fourfold coincidences including two photoelectrons and two Auger electrons. It is estimated that the core-core DPI into Xe2+ 4d(-2) at a photon energy of 301.6 eV has a favored cross section of about 0.3 MB. The intense core-core DPI is due to mixing of the 4d(-2) continuum with the 4p single photoionization, which is manifested in the relative intensities of the Xe2+ 4d(-2) components.

摘要

利用磁瓶飞行时间光谱仪研究了导致Xe2+ 4d(-2)双芯孔态的双光电离(DPI)。从包括两个光电子和两个俄歇电子的四重符合中提取的俄歇线证实了Xe2+ 4d(-2)态的归属。据估计,在301.6 eV光子能量下,Xe2+ 4d(-2)的芯-芯双光电离具有约0.3 MB的有利截面。强烈的芯-芯双光电离是由于4d(-2)连续体与4p单光电离的混合,这在Xe2+ 4d(-2)组分的相对强度中表现出来。

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