Kumar Rajesh, Mavi H S, Shukla A K
Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.
Micron. 2008;39(3):287-93. doi: 10.1016/j.micron.2007.04.005. Epub 2007 Apr 20.
Surface morphologies of the laser-etched silicon were studied as a function of the laser power densities. Scanning electron microscope (SEM) results show that different kind of microstructures develop. Pores like structures are formed at low laser power density and pillar like structures are obtained at higher laser power density. It is the etching rate, which is responsible for the surface morphology reconstructions. Etching rate was found to be a function of the laser power density. Atomic force microscope (AFM) results reveal that macro and microsurface morphology reconstructions take place simultaneously as a result of increasing etching rate. Macrosurface morphology reconstruction takes place on the silicon wafer surface and the microsurface morphology reconstruction takes place inside the pore wall.
