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永磁体退磁实验中的高级剂量测定法。

High-level dosimetry at the demagnetization experiments of permanent magnets.

作者信息

Lee H S, Qiu R, Hong S, Chung C W, Bizen T, Li J

机构信息

Pohang Accelerator Laboratory, POSTECH, Pohang 790-784, Korea.

出版信息

Radiat Prot Dosimetry. 2007;126(1-4):288-93. doi: 10.1093/rpd/ncm060. Epub 2007 Jun 16.

DOI:10.1093/rpd/ncm060
PMID:17575293
Abstract

The measurements of high-energy and high dose mixed radiation from high-energy electron accelerator are carried out using a radiation damage monitor. It consists of two Radiation-Sensing Field-Effect Transistors (RADFETs) for total absorbed dose from mainly gamma ray and other charged particles and a Si PIN diode for neutron fluence. This is a part of the demagnetization study of rare earth permanent magnet irradiated by 2.5-GeV electron beam. The sensitivities of damage detectors are measured using 65-MeV quasi-monoenergic neutron, 14-MeV D-T neutron, (252)Cf neutron for Si PIN diode and (60)Co and (137)Cs gamma ray for RADFETs. Measured sensitivities are in acceptable range in the comparison of producer's proposed values. The dose and fluence measurements are carried out for the same target condition, Cu and Ta, as that for the demagnetization study. The 5 x 5 cm(2) cross-sectional and 5.5-cm-thick Pb target is also used for the general comparison with photoneutron yields. All measured dose and fluence are compared with the calculated results using the FLUKA code and agree well each other. The application of this kind of radiation damage monitor to high-level dosimetry at high-energy electron accelerator has been discussed.

摘要

利用辐射损伤监测器对高能电子加速器产生的高能高剂量混合辐射进行测量。它由两个用于测量主要来自伽马射线和其他带电粒子的总吸收剂量的辐射敏感场效应晶体管(RADFET)以及一个用于测量中子注量的硅PIN二极管组成。这是对2.5 GeV电子束辐照的稀土永磁体退磁研究的一部分。使用65 MeV准单能中子、14 MeV D-T中子、(252)Cf中子测量硅PIN二极管的损伤探测器灵敏度,使用(60)Co和(137)Cs伽马射线测量RADFET的损伤探测器灵敏度。在与生产商建议值的比较中,测量得到的灵敏度在可接受范围内。针对与退磁研究相同的靶材条件(铜和钽)进行剂量和注量测量。还使用5×5 cm²横截面和5.5 cm厚的铅靶与光中子产额进行一般比较。将所有测量的剂量和注量与使用FLUKA代码计算的结果进行比较,二者吻合良好。讨论了这种辐射损伤监测器在高能电子加速器高剂量测量中的应用。

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