Williams J R, Dicarlo L, Marcus C M
School of Engineering and Applied Science, Harvard University, Cambridge, MA 02138, USA.
Science. 2007 Aug 3;317(5838):638-41. doi: 10.1126/science.1144657. Epub 2007 Jun 28.
The unique band structure of graphene allows reconfigurable electric-field control of carrier type and density, making graphene an ideal candidate for bipolar nanoelectronics. We report the realization of a single-layer graphene p-n junction in which carrier type and density in two adjacent regions are locally controlled by electrostatic gating. Transport measurements in the quantum Hall regime reveal new plateaus of two-terminal conductance across the junction at 1 and 32 times the quantum of conductance, e(2)/h, consistent with recent theory. Beyond enabling investigations in condensed-matter physics, the demonstrated local-gating technique sets the foundation for a future graphene-based bipolar technology.
石墨烯独特的能带结构使得载流子类型和密度能够通过电场进行可重构控制，这使石墨烯成为双极纳米电子学的理想候选材料。我们报道了单层石墨烯 p-n 结的实现，其中两个相邻区域的载流子类型和密度通过静电门控进行局部控制。在量子霍尔效应区域的输运测量揭示了跨结的两终端电导在电导量子 e²/h 的 1 倍和 32 倍处出现新的平台，这与最近的理论一致。除了能够用于凝聚态物理的研究之外，所展示的局部门控技术为未来基于石墨烯的双极技术奠定了基础。
