Tran Thuy, Bolto Brian, Gray Stephen, Hoang Manh, Ostarcevic Eddy
CSIRO Manufacturing & Materials Technology, Private Bag 33, Clayton South, Vic. 3169, Australia.
Water Res. 2007 Sep;41(17):3915-23. doi: 10.1016/j.watres.2007.06.008. Epub 2007 Jun 12.
The fouling of a spiral wound reverse osmosis (RO) membrane after nearly 1 year of service in a brackish water treatment plant was investigated using optical and electron microscopic methods, Fourier transform infrared spectroscopy (FTIR) and inductively coupled plasma atomic emission spectrometry (ICP-AES). Both the top surface and the cross-section of the fouled membrane were analysed to monitor the development of the fouling layer. It has been found that the extent of fouling was uneven across the membrane surface with regions underneath or in the vicinity of the strands of the feed spacer being more severely affected. Fouling appeared to have developed through different stages. In particular, it consisted of an initial thin fouling layer of an amorphous matrix with embedded particulate matter. The amorphous matrix comprised organic-Al-P complexes and the particulate matter was mostly aluminium silicates. Subsequently, as the fouling layer reached a thickness of about 5-7microm, further amorphous material, which is suggested to include extracellular polymeric substances such as polysaccharides, started to deposit on top of the existing fouling layer. This secondary amorphous material did not seem to contain any particulate matter nor any inorganic elements within it, but acted as a substrate upon which aluminium silicate crystals grew exclusively in the absence of other foulants, including natural organic matter (NOM).
采用光学和电子显微镜方法、傅里叶变换红外光谱(FTIR)和电感耦合等离子体原子发射光谱(ICP - AES),对在微咸水净化厂运行近1年后的螺旋卷式反渗透(RO)膜的污染情况进行了研究。对污染膜的顶面和横截面都进行了分析,以监测污染层的发展情况。研究发现,膜表面的污染程度并不均匀,进料间隔条下方或附近区域受到的影响更为严重。污染似乎经历了不同阶段。具体而言,它最初是由含有嵌入颗粒物的无定形基质构成的薄污染层。无定形基质由有机铝磷络合物组成,颗粒物主要是硅酸铝。随后,当污染层达到约5 - 7微米的厚度时,进一步的无定形物质开始沉积在现有污染层之上,这种物质被认为包括多糖等细胞外聚合物。这种次生无定形物质似乎既不包含任何颗粒物,也不含有任何无机元素,但它充当了一种基质,在没有包括天然有机物(NOM)在内的其他污染物的情况下,硅酸铝晶体仅在其上生长。