具有高温稳定性的高亮度 1.3μm InAs/GaAs 量子点锥形激光器。

High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability.

机构信息

Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.

出版信息

Opt Lett. 2012 Oct 1;37(19):4071-3. doi: 10.1364/OL.37.004071.

DOI:10.1364/OL.37.004071

Abstract

We demonstrate high-brightness 1.3 μm tapered lasers with high temperature stability by using p-doped InAs/GaAs quantum dots (QDs) as the active region. It is found that the beam quality factor M(2) for the devices is almost unchanged as the light power and temperature increase. The almost constant M(2) results from the p-doped QD active region.

摘要

我们使用 p 掺杂 InAs/GaAs 量子点 (QD) 作为有源区，展示了具有高热稳定性的高亮度 1.3 μm 锥形激光器。研究发现，随着光功率和温度的升高，器件的光束质量因子 M(2)几乎保持不变。这一几乎恒定的 M(2)归因于 p 掺杂 QD 有源区。