Macech Piotr, Pemberton Jeanne E
Department of Chemistry, University of Arizona, 1306 East University Boulevard, Tucson, Arizona 85721, USA.
Langmuir. 2007 Sep 11;23(19):9816-22. doi: 10.1021/la700967y. Epub 2007 Aug 11.
A novel method for covalent attachment of ultrathin silica films (thickness <10 nm) to gold substrates is reported. Silica layers were prepared using spin-coating of sol-gel precursor solutions onto gold substrates that were cleaned and oxidized using UV photo-oxidation in an ozone atmosphere. The gold oxide layer resulting from this process acts as a wetting control and adhesive agent for the ultrathin silica layer. Control of silica layer thickness between approximately 6 and 60 nm through modification of precursor solution composition or by repetitive deposition is demonstrated. Films were characterized using infrared spectroscopy, ellipsometry, atomic force microscopy, and cyclic voltammetry. For the standard deposition parameters developed here, films were determined to be 5.5 +/- 0.75 nm thick, and were stable in aqueous solutions ranging in pH from 2 to 10 for at least 30 min. Films contained nanoscopic defects with radii of <or=2 microm in all cases, at a density of 1.6 defects per 10 mum x 10 mum region, with a weighted average defect radius of 200 nm. This array of defects was shown to exhibit a voltammetric response consistent with an ultramicroelectrode array. Finally, ultrathin silica films were also modified with self-assembled monolayers of octadecylsilane, demonstrating the surface chemistry of bulk silica.
报道了一种将超薄二氧化硅薄膜(厚度<10 nm)共价附着到金基底上的新方法。通过在臭氧气氛中使用紫外线光氧化对金基底进行清洁和氧化,然后将溶胶 - 凝胶前驱体溶液旋涂到金基底上来制备二氧化硅层。该过程产生的氧化金层充当超薄二氧化硅层的润湿性控制剂和粘合剂。通过改变前驱体溶液组成或重复沉积,证明了可以将二氧化硅层厚度控制在约6至60 nm之间。使用红外光谱、椭圆偏振法、原子力显微镜和循环伏安法对薄膜进行了表征。对于此处开发的标准沉积参数,确定薄膜厚度为5.5±0.75 nm,并且在pH值为2至10的水溶液中至少30分钟内保持稳定。在所有情况下,薄膜均含有半径≤2微米的纳米级缺陷,在每10微米×10微米区域内缺陷密度为1.6个,加权平均缺陷半径为200 nm。这种缺陷阵列显示出与超微电极阵列一致的伏安响应。最后,还用十八烷基硅烷自组装单分子层对超薄二氧化硅薄膜进行了修饰,展示了块状二氧化硅的表面化学性质。