Science. 1995 Apr 14;268(5208):270-1. doi: 10.1126/science.268.5208.270.
The thiophene oligomer alpha-hexathienylene (alpha-6T) has been successfully used as the active semiconducting material in thin-film transistors. Field-induced conductivity in thin-film transistors with alpha-6T active layers occurs only near the interfacial plane, whereas the residual conductivity caused by unintentional doping scales with the thickness of the layer. The two-dimensional nature of the field-induced conductivity is due not to any anisotropy in transport with respect to any molecular axis but to interface effects. Optimized methods of device fabrication have resulted in high field-effect mobilities and on/off current ratios of > 10(6). The current densities and switching speeds are good enough to allow consideration of these devices in practical large-area electronic circuits.
噻吩低聚物α-六噻吩(α-6T)已成功用作薄膜晶体管中的活性半导体材料。具有α-6T 活性层的薄膜晶体管中的场致导电性仅在界面平面附近发生,而由非故意掺杂引起的剩余电导率与层的厚度成正比。场致导电性的二维性质不是由于相对于任何分子轴的传输中的各向异性引起的,而是由于界面效应引起的。优化的器件制造方法导致高场效应迁移率和>10(6)的导通/关断电流比。电流密度和开关速度足以使这些器件在实际的大面积电子电路中得到考虑。