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用于制造大规模器件阵列的碳纳米管化学辅助定向组装

Chemically assisted directed assembly of carbon nanotubes for the fabrication of large-scale device arrays.

作者信息

Tulevski George S, Hannon James, Afzali Ali, Chen Zhihong, Avouris Phaedon, Kagan Cherie R

机构信息

IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA.

出版信息

J Am Chem Soc. 2007 Oct 3;129(39):11964-8. doi: 10.1021/ja073647t. Epub 2007 Sep 7.

DOI:10.1021/ja073647t
PMID:17824611
Abstract

We report the directed assembly of single-walled carbon nanotubes (SWCNTs) at lithographically defined positions on gate oxide surfaces, allowing for the high yield ( approximately 90%) and parallel fabrication of SWCNT device arrays. SWCNTs were first chemically functionalized through diazonium chemistry with a hydroxamic acid end group that both renders the SWCNTs water-soluble and discriminately binds the SWCNTs to basic metal oxide surfaces (i.e., hafnium oxide (HfO2)). The functionalized SWCNTs are then assembled from an aqueous solution into narrow trenches etched into SiO2 films with HfO2 at the bottom. The side walls of the patterned trenches induce alignment of the SWCNTs along the length of the trenches. Heating the structures to 600 degrees C removes the organic moieties, leaving pristine SWCNTs as evidenced by Raman spectroscopy and electrical measurements. Palladium source-drain electrodes deposited perpendicular to the trench length readily contact the ends of the aligned SWCNTs. The resultant devices exhibit the electrical performance expected for SWCNT devices, with no performance deterioration as a result of the placement process. This technique allows for the directed assembly and alignment of SWCNTs over a large area and results in a high yield of working devices, presenting a promising path toward large-scale SWCNT device integration.

摘要

我们报道了在栅极氧化物表面光刻定义的位置上对单壁碳纳米管(SWCNT)进行定向组装,从而实现了SWCNT器件阵列的高产率(约90%)和平行制造。首先通过重氮化学方法用异羟肟酸端基对SWCNT进行化学功能化,该端基既能使SWCNT具有水溶性,又能使SWCNT选择性地结合到碱性金属氧化物表面(即氧化铪(HfO2))。然后将功能化的SWCNT从水溶液中组装到底部带有HfO2的SiO2薄膜中蚀刻出的窄沟槽中。图案化沟槽的侧壁促使SWCNT沿沟槽长度方向排列。将结构加热到600摄氏度可去除有机部分,拉曼光谱和电学测量表明留下了原始的SWCNT。垂直于沟槽长度方向沉积的钯源漏电极很容易与排列好的SWCNT的端部接触。所得器件展现出SWCNT器件预期的电学性能,且放置过程不会导致性能下降。这种技术允许在大面积上对SWCNT进行定向组装和排列,并实现了高产量的工作器件,为大规模SWCNT器件集成提供了一条有前景的途径。

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