Suppr超能文献

基于电子转移的分子移位寄存器。

A molecular shift register based on electron transfer.

出版信息

Science. 1988 Aug 12;241(4867):817-20. doi: 10.1126/science.241.4867.817.

Abstract

An electronic shift-register memory at the molecular level is described. The memory elements are based on a chain of electron-transfer molecules and the information is shifted by photoinduced electron-transfer reactions. This device integrates designed electronic molecules onto a very large scale integrated (silicon microelectronic) substrate, providing an example of a "molecular electronic device" that could actually be made. The design requirements for such a device and possible synthetic strategies are discussed. Devices along these lines should have lower energy usage and enhanced storage density.

摘要

本文描述了一种分子水平的电子移位寄存器存储器。存储元件基于电子转移分子链,信息通过光诱导电子转移反应移位。该装置将设计的电子分子集成到非常大规模集成电路(硅微电子)衬底上,为实际制造“分子电子器件”提供了一个范例。讨论了这种器件的设计要求和可能的合成策略。沿着这些路线的器件应该具有更低的能耗和更高的存储密度。

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验