Yamanouchi M, Ieda J, Matsukura F, Barnes S E, Maekawa S, Ohno H
Semiconductor Spintronics Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, 1-18 Kitamemachi, Aoba-ku, Sendai 980-0023, Japan.
Science. 2007 Sep 21;317(5845):1726-9. doi: 10.1126/science.1145516.
Magnetic domain wall motion induced by magnetic fields and spin-polarized electrical currents is experimentally well established. A full understanding of the underlying mechanisms, however, remains elusive. For the ferromagnetic semiconductor (Ga,Mn)As, we have measured and compared such motions in the thermally activated subthreshold, or "creep," regime, where the velocity obeys an Arrhenius scaling law. Within this law, the clearly different exponents of the current and field reflect different universality classes, showing that the drive mechanisms are fundamentally different.
由磁场和自旋极化电流引起的磁畴壁运动在实验上已得到充分证实。然而，对其潜在机制的全面理解仍然难以捉摸。对于铁磁半导体（Ga,Mn）As，我们已经在热激活亚阈值或“蠕变” regime中测量并比较了这种运动，其中速度服从阿仑尼乌斯标度律。在这个定律中，电流和场的明显不同的指数反映了不同的普适类，表明驱动机制在根本上是不同的。
