透射电子显微镜断层扫描揭示的GaP-GaAs纳米线的三维形态

Three-dimensional morphology of GaP-GaAs nanowires revealed by transmission electron microscopy tomography.

作者信息

Verheijen Marcel A, Algra Rienk E, Borgström Magnus T, Immink George, Sourty Erwan, Enckevort Willem J P van, Vlieg Elias, Bakkers Erik P A M

机构信息

Philips Research Laboratories Eindhoven, High Tech Campus 11, 5656AE Eindhoven, The Netherlands.

出版信息

Nano Lett. 2007 Oct;7(10):3051-5. doi: 10.1021/nl071541q. Epub 2007 Sep 21.

DOI:10.1021/nl071541q

PMID:17887714

Abstract

We have investigated the morphology of heterostructured GaP-GaAs nanowires grown by metal-organic vapor-phase epitaxy as a function of growth temperature and V/III precursor ratio. The study of heterostructured nanowires with transmission electron microscopy tomography allowed the three-dimensional morphology to be resolved, and discrimination between the effect of axial (core) and radial (shell) growth on the morphology. A temperature- and precursor-dependent structure diagram for the GaP nanowire core morphology and the evolution of the different types of side facets during GaAs and GaP shell growth were constituted.

摘要

我们研究了通过金属有机气相外延生长的异质结构GaP-GaAs纳米线的形态，该形态是生长温度和V/III前驱体比率的函数。利用透射电子显微镜断层扫描对异质结构纳米线进行研究，能够解析其三维形态，并区分轴向（芯部）和径向（壳层）生长对形态的影响。构建了GaP纳米线芯部形态的温度和前驱体依赖性结构图，以及GaAs和GaP壳层生长过程中不同类型侧面的演变情况。