Davtyan Arman, Krause Thilo, Kriegner Dominik, Al-Hassan Ali, Bahrami Danial, Mostafavi Kashani Seyed Mohammad, Lewis Ryan B, Küpers Hanno, Tahraoui Abbes, Geelhaar Lutz, Hanke Michael, Leake Steven John, Loffeld Otmar, Pietsch Ullrich
Faculty of Science and Engineering, University of Siegen, Siegen, 57068, Germany.
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, Berlin, 10117, Germany.
J Appl Crystallogr. 2017 Apr 13;50(Pt 3):673-680. doi: 10.1107/S1600576717004149. eCollection 2017 Jun 1.
Coherent X-ray diffraction imaging at symmetric Bragg reflections was used to resolve the structure of GaAs/InGaAs/GaAs core-shell-shell nanowires grown on a silicon (111) substrate. Diffraction amplitudes in the vicinity of GaAs 111 and GaAs 333 reflections were used to reconstruct the lost phase information. It is demonstrated that the structure of the core-shell-shell nanowire can be identified by means of phase contrast. Interestingly, it is found that both scattered intensity in the (111) plane and the reconstructed scattering phase show an additional threefold symmetry superimposed with the shape function of the investigated hexagonal nanowires. In order to find the origin of this threefold symmetry, elasticity calculations were performed using the finite element method and subsequent kinematic diffraction simulations. These suggest that a non-hexagonal (In,Ga)As shell covering the hexagonal GaAs core might be responsible for the observation.
利用对称布拉格反射的相干X射线衍射成像技术解析了生长在硅(111)衬底上的GaAs/InGaAs/GaAs核壳壳纳米线的结构。利用GaAs 111和GaAs 333反射附近的衍射振幅来重建丢失的相位信息。结果表明,核壳壳纳米线的结构可以通过相位对比来识别。有趣的是,发现(111)平面内的散射强度和重建的散射相位都显示出叠加在所研究的六边形纳米线形状函数上的额外三重对称性。为了找到这种三重对称性的起源,使用有限元方法进行了弹性计算,并随后进行了运动学衍射模拟。这些结果表明,覆盖六边形GaAs核的非六边形(In,Ga)As壳可能是造成这种观察结果的原因。