二维铟铟氧化物复合材料中的超导-绝缘体转变
Superconductor-insulator transition in two-dimensional indium-indium-oxide composite.
作者信息
Hen Bar, Zhang Xinyang, Shelukhin Victor, Kapitulnik Aharon, Palevski Alexander
机构信息
School of Physics and Astronomy, Raymond and Beverly Sackler Faculty of Exact Sciences, Tel Aviv University, Tel Aviv 6997801, Israel.
Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305.
出版信息
Proc Natl Acad Sci U S A. 2021 Jan 12;118(2). doi: 10.1073/pnas.2015970118.
The magnetic-field-tuned superconductor-to-insulator transition was studied in a hybrid system of superconducting indium islands, deposited on an indium oxide (InOx) thin film, which exhibits global superconductivity at low magnetic fields. Vacuum annealing was used to tune the conductivity of the InOx film, thereby tuning the inergrain coupling and the nature of the transition. The hybrid system exhibits a "giant" magnetoresistance above the magnetic-field-tuned superconductor-to-insulator transition (H-SIT), with critical behavior similar to that of uniform InOx films but at much lower magnetic fields, that manifests the duality between Cooper pairs and vortices. A key feature of this hybrid system is the separation between the quantum criticality and the onset of nonequilibrium behavior.
在一个由沉积在氧化铟（InOx）薄膜上的超导铟岛组成的混合系统中，研究了磁场调谐的超导体-绝缘体转变，该系统在低磁场下表现出整体超导性。采用真空退火来调节InOx薄膜的电导率，从而调节晶粒间耦合和转变的性质。该混合系统在磁场调谐的超导体-绝缘体转变（H-SIT）之上表现出“巨大”磁电阻，其临界行为与均匀InOx薄膜相似，但在低得多的磁场下，这体现了库珀对与涡旋之间的对偶性。这个混合系统的一个关键特征是量子临界性与非平衡行为开始之间的分离。
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