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用于刺激培养神经元的具有氢化非晶硅和低导电钝化层的光寻址平面电极。

Light-addressable planar electrode with hydrogenated amorphous silicon and low-conductive passivation layer for stimulation of cultured neurons.

作者信息

Suzurikawa Jun, Takahashi Hirokazu, Takayama Yuzo, Warisawa Shin'ichi, Mitsuishi Mamoru, Nakao Masayuki, Jimbo Yasuhiko

机构信息

Dept. of Mechano-Informatics, The University of Tokyo, Japan.

出版信息

Conf Proc IEEE Eng Med Biol Soc. 2006;2006:648-51. doi: 10.1109/IEMBS.2006.259828.

DOI:10.1109/IEMBS.2006.259828
PMID:17945992
Abstract

Conventional multielectrode arrays (MEAs) cannot always access desired neurons due to low electrode density and small number of electrode. To overcome this problem, we propose a light-addressable planar electrode on a glass substrate. The electrode has a 3-layer structure, namely a transparent SnO2 layer, an hydrogenated amorphous silicon (a-Si:H) layer, and a passivation layer. Illumination to the a-Si:H layer increases the conductivity of a-Si:H and creates a virtual electrode at the surface of the illuminated site. In the present study, we developed a low-conductive zinc antimonate-dispersed epoxy layer. This layer could successfully prevent penetration of culture medium and thus deterioration of a-Si:H layer. A fluo-4 calcium imaging demonstrated that, when the whole area of electrode was illuminated, negative-monophasic voltage-controlled pulses could also successfully activate neurons cultured on the electrode. Moreover, the focused illumination to the electrode resulted in the selective activation of neurons around the illuminated area.

摘要

传统的多电极阵列(MEA)由于电极密度低和电极数量少,无法总是接触到所需的神经元。为了克服这个问题,我们在玻璃基板上提出了一种光寻址平面电极。该电极具有三层结构,即透明的SnO2层、氢化非晶硅(a-Si:H)层和钝化层。对a-Si:H层进行光照会增加a-Si:H的导电性,并在光照部位的表面产生一个虚拟电极。在本研究中,我们开发了一种低导电性的锑酸锌分散环氧树脂层。该层可以成功地防止培养基渗透,从而防止a-Si:H层变质。Fluo-4钙成像显示,当电极的整个区域被照亮时,负单相电压控制脉冲也能成功激活培养在电极上的神经元。此外,对电极的聚焦光照导致了光照区域周围神经元的选择性激活。

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