Ferrari Anna Maria, Pisani Cesare, Cinquini Fabrizio, Giordano Livia, Pacchioni Gianfranco
Dipartimento di Chimica IFM, Università di Torino, via Giuria 5, 10125 Torino, Italy.
J Chem Phys. 2007 Nov 7;127(17):174711. doi: 10.1063/1.2796154.
The electronic structure of oxygen and nickel vacancies at the surface of NiO(100) has been investigated theoretically by means of density functional theory (DFT) comparing plane wave density functional theory with the Hubbard correction DFT+U with atomic-orbital-hybrid-functional (20% exact-exchange) calculations. The two approaches provide a similar description of the nature of the oxygen vacancy. At variance with the same defect center in MgO, where two electrons are trapped in the vacancy, on NiO the charge is more delocalized, partly over the Ni ions around the vacancy, the rest either trapped in the vacancy or delocalized over other Ni ions. Concerning the nickel vacancy, both methods clearly show that the removal of a neutral Ni atom does not result in the oxidation of other nickel ions from Ni2+ to Ni3+ but rather in the formation of two holes in the O 2p valence band. However, the description is slightly different with the approaches, the hybrid functional indicates that the holes are essentially localized on the oxygen ions nearest to the vacancy, while they result much more delocalized from the DFT+U calculation. Comparison with the corresponding results, obtained with the two methods for the case of the Mg vacancy in MgO, suggests that the DFT+U approach does not adequately correct for the self-interaction of the unpaired electrons in this case. However, the overall picture that emerges clearly from the present calculations is that both defects affect the electronic structure in a much wider region in NiO than in MgO.
通过密度泛函理论(DFT),采用平面波密度泛函理论与含哈伯德修正的DFT + U以及原子轨道杂化泛函(20%精确交换)计算方法,从理论上研究了NiO(100)表面氧空位和镍空位的电子结构。这两种方法对氧空位性质的描述相似。与MgO中相同的缺陷中心不同,在MgO中两个电子被困在空位中,而在NiO中电荷更加离域,部分电荷分布在空位周围的Ni离子上,其余电荷要么被困在空位中,要么离域到其他Ni离子上。关于镍空位,两种方法都清楚地表明,去除一个中性Ni原子不会导致其他镍离子从Ni2+氧化为Ni3+,而是在O 2p价带中形成两个空穴。然而,两种方法的描述略有不同,杂化泛函表明空穴基本上局域在最靠近空位的氧离子上,而从DFT + U计算结果来看,空穴的离域程度要大得多。将这两种方法应用于MgO中Mg空位情况所得到的相应结果进行比较,表明在这种情况下DFT + U方法不能充分校正未成对电子的自相互作用。然而,从目前的计算中清晰呈现的总体情况是,与MgO相比,这两种缺陷对NiO中电子结构的影响范围要大得多。