Ronci Fabio, Colonna Stefano, Cricenti Antonio, Le Lay Guy
ISM CNR, Via del Fosso del Cavaliere 100, I-00133 Roma, Italy.
Phys Rev Lett. 2007 Oct 19;99(16):166103. doi: 10.1103/PhysRevLett.99.166103.
We present a low-temperature scanning tunneling microscopy study of the alpha-Sn/Si(111) surface that demonstrates the fluctuating behavior of the Sn adatoms. The dynamical fluctuation model, successfully applied in describing the alpha-Sn/Ge(111) surface, is proposed for the related alpha-Sn/Si(111) surface too, although with a much lower transition temperature. In addition, a new phenomenon appears responsible for the unexpected evidence that the average oscillation frequency remains constant at temperatures lower than 15 K, in contradiction to the Arrhenius law. We explain this phenomenon as quantum tunneling of Sn adatoms.