Ren Xiao-Yan, Kim Hyun-Jung, Niu Chun-Yao, Jia Yu, Cho Jun-Hyung
International Laboratory for Quantum Functional Materials of Henan, and School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China.
Department of Physics and Research Institute for Natural Sciences, Hanyang University, 17 Haengdang-Dong, Seongdong-Ku, Seoul 133-791, Korea.
Sci Rep. 2016 Jun 13;6:27868. doi: 10.1038/srep27868.
It has been a long-standing puzzle why buckled dimers of the Si(001) surface appeared symmetric below ~20 K in scanning tunneling microscopy (STM) experiments. Although such symmetric dimer images were concluded to be due to an artifact induced by STM measurements, its underlying mechanism is still veiled. Here, we demonstrate, based on a first-principles density-functional theory calculation, that the symmetric dimer images are originated from the flip-flop motion of buckled dimers, driven by quantum tunneling (QT). It is revealed that at low temperature the tunneling-induced surface charging with holes reduces the energy barrier for the flipping of buckled dimers, thereby giving rise to a sizable QT-driven frequency of the flip-flop motion. However, such a QT phenomenon becomes marginal in the tunneling-induced surface charging with electrons. Our findings provide an explanation for low-temperature STM data that exhibits apparent symmetric (buckled) dimer structure in the filled-state (empty-state) images.
长期以来,一个谜题一直存在:在扫描隧道显微镜(STM)实验中,为什么Si(001)表面的弯曲二聚体在约20K以下呈现出对称结构。尽管这种对称二聚体图像被认为是STM测量引起的假象,但其潜在机制仍然不明。在此,我们基于第一性原理密度泛函理论计算表明,对称二聚体图像源自弯曲二聚体的翻转运动,该运动由量子隧穿(QT)驱动。结果显示,在低温下,隧穿诱导的空穴表面充电降低了弯曲二聚体翻转的能垒,从而产生了可观的由QT驱动的翻转运动频率。然而,这种QT现象在隧穿诱导的电子表面充电中变得不明显。我们的研究结果为低温STM数据提供了解释,这些数据在填充态(空态)图像中呈现出明显的对称(弯曲)二聚体结构。