Combescot Monique, Betbeder-Matibet Odile, Combescot Roland
Institut des NanoSciences de Paris, Université Pierre et Marie Curie, CNRS, Campus Boucicaut, 140 rue de Lourmel, 75015 Paris, France.
Phys Rev Lett. 2007 Oct 26;99(17):176403. doi: 10.1103/PhysRevLett.99.176403.
Bose-Einstein condensation in semiconductors is controlled by the nonelementary-boson nature of excitons. Pauli exclusion between the fermionic components of composite excitons produces dramatic exchange couplings between bright and dark states. In microcavities, where bright excitons and photons form polaritons, they force the condensate to be linearly polarized, as observed. In bulk, they also force linear polarization, but of dark states, due to interband Coulomb scatterings. To evidence this dark condensate, indirect processes are thus needed.
半导体中的玻色-爱因斯坦凝聚由激子的非基本玻色子性质控制。复合激子的费米子组分之间的泡利不相容原理在亮态和暗态之间产生显著的交换耦合。在微腔中，亮激子和光子形成极化激元，正如所观察到的，它们迫使凝聚态呈线性极化。在体材料中，由于带间库仑散射，它们也迫使暗态呈线性极化。因此，为了证明这种暗凝聚，需要间接过程。
