Moon Sunkyung, Song Woon, Lee Joon Sung, Kim Nam, Kim Jinhee, Lee Soon-Gul, Choi Mahn-Soo
Korea Research Institute of Standards and Science, Daejeon 305-600, Korea.
Phys Rev Lett. 2007 Oct 26;99(17):176804. doi: 10.1103/PhysRevLett.99.176804. Epub 2007 Oct 25.
We fabricated a quantum-dot device consisting of an individual double-wall carbon nanotube and studied its electrical transport properties at low temperatures. In the negative bias region, the gate modulation curve exhibited quasiperiodic current oscillations, attributed to the Coulomb blockade of single-electron tunneling. We observed both four- and eightfold shell filling in the Coulomb diamond structures. The observation implies an eightfold degeneracy in the single-particle energy levels, which is higher than the fourfold degeneracy of a single-wall carbon nanotube. We show that the observed eightfold shell filling is a unique characteristic of a double-wall carbon nanotube quantum-dot device.
我们制造了一种由单个双壁碳纳米管组成的量子点器件,并研究了其在低温下的电输运特性。在负偏压区域,栅极调制曲线呈现出准周期电流振荡,这归因于单电子隧穿的库仑阻塞。我们在库仑菱形结构中观察到了四重和八重壳层填充。该观察结果意味着单粒子能级存在八重简并,这高于单壁碳纳米管的四重简并。我们表明,观察到的八重壳层填充是双壁碳纳米管量子点器件的独特特征。