Khademhosseini Vahideh, Dideban Daryoosh, Ahmadi Mohammad Taghi, Heidari Hadi
Institute of Nanoscience and Nanotechnology, University of Kashan, Kashan 8731753153, Iran.
Department of Electrical and Computer Engineering, University of Kashan, Kashan 8731753153, Iran.
Molecules. 2022 Jan 4;27(1):301. doi: 10.3390/molecules27010301.
The single electron transistor (SET) is a nanoscale switching device with a simple equivalent circuit. It can work very fast as it is based on the tunneling of single electrons. Its nanostructure contains a quantum dot island whose material impacts on the device operation. Carbon allotropes such as fullerene (C), carbon nanotubes (CNTs) and graphene nanoscrolls (GNSs) can be utilized as the quantum dot island in SETs. In this study, multiple quantum dot islands such as GNS-CNT and GNS-C are utilized in SET devices. The currents of two counterpart devices are modeled and analyzed. The impacts of important parameters such as temperature and applied gate voltage on the current of two SETs are investigated using proposed mathematical models. Moreover, the impacts of CNT length, fullerene diameter, GNS length, and GNS spiral length and number of turns on the SET's current are explored. Additionally, the Coulomb blockade ranges (CB) of the two SETs are compared. The results reveal that the GNS-CNT SET has a lower Coulomb blockade range and a higher current than the GNS-C SET. Their charge stability diagrams indicate that the GNS-CNT SET has smaller Coulomb diamond areas, zero-current regions, and zero-conductance regions than the GNS-C SET.
单电子晶体管（SET）是一种具有简单等效电路的纳米级开关器件。由于它基于单电子隧穿，所以能够非常快速地工作。其纳米结构包含一个量子点岛，该量子点岛的材料会影响器件的运行。诸如富勒烯（C）、碳纳米管（CNT）和石墨烯纳米卷（GNS）等碳同素异形体可被用作单电子晶体管中的量子点岛。在本研究中，单电子晶体管器件中使用了多个量子点岛，如GNS-CNT和GNS-C。对两个对应器件的电流进行了建模和分析。使用所提出的数学模型研究了温度和施加的栅极电压等重要参数对两个单电子晶体管电流的影响。此外，还探究了碳纳米管长度、富勒烯直径、石墨烯纳米卷长度、石墨烯纳米卷螺旋长度和匝数对单电子晶体管电流的影响。此外，还比较了两个单电子晶体管的库仑阻塞范围（CB）。结果表明，与GNS-C单电子晶体管相比，GNS-CNT单电子晶体管具有更低的库仑阻塞范围和更高的电流。它们的电荷稳定性图表明，与GNS-C单电子晶体管相比，GNS-CNT单电子晶体管具有更小的库仑菱形区域、零电流区域和零电导区域。
