Resonant photorefractive effect in InGaAs/GaAs multiple quantum wells.
作者信息
Iwamoto S, Kageshima H, Yuasa T, Nishioka M, Someya T, Arakawa Y, Fukutani K, Shimura T, Kuroda K
出版信息
Opt Lett. 1999 Mar 1;24(5):321-3. doi: 10.1364/ol.24.000321.
PMID:18071493
Abstract
Semi-insulating InGaAs/GaAs multiple quantum wells are fabricated by metal-organic vapor-phase epitaxy and proton implantation. Two-wave mixing gain and four-wave mixing diffraction efficiency are measured at wavelengths of 0.91-0.94microm in the Franz-Keldysh geometry. We observe a large photorefractive effect caused by the excitonic electro-optic effect. The maximum diffraction efficiency reaches ~1.5x10(-4) .
摘要
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