Kim Woo Youn, Kim Kwang S
Center for Superfunctional Materials, Department of Chemistry, Pohang University of Science and Technology, San 31, Hyojadong, Namgu, Pohang 790-784, Korea.
J Comput Chem. 2008 May;29(7):1073-83. doi: 10.1002/jcc.20865.
Based on density functional theory, we have developed a program code to investigate the electron transport characteristics for a variety of nanometer scaled devices in the presence of an external bias voltage. We employed basis sets comprised of linear combinations of numerical type atomic orbitals, particularly focusing on k-point sampling for the realistic modeling of the bulk electrode. The scheme coupled with the matrix version of the nonequilibrium Green's function method enables calculation of the transmission coefficients at a given energy and voltage in a self-consistent manner as well as the corresponding current-voltage (I-V) characteristics. This scheme has advantages because it is applicable to large systems, easily transportable to different types of quantum chemistry packages, and extendable to time-dependent phenomena or inelastic scatterings. It has been applied to diverse types of practical electronic devices such as carbon nanotubes, graphene nanoribbons, metallic nanowires, and molecular electronic devices. The quantum conductance phenomena for systems involving quantum point contacts and I-V curves for a single molecule in contact with metal electrodes using the k-point sampling method are described.
基于密度泛函理论,我们开发了一个程序代码,用于研究在外部偏置电压存在的情况下各种纳米尺度器件的电子输运特性。我们采用了由数值型原子轨道的线性组合构成的基组,特别关注用于体电极实际建模的k点采样。该方案与非平衡格林函数方法的矩阵形式相结合,能够以自洽的方式计算给定能量和电压下的传输系数以及相应的电流 - 电压(I - V)特性。该方案具有优势,因为它适用于大型系统,易于移植到不同类型的量子化学软件包,并且可扩展到与时间相关的现象或非弹性散射。它已被应用于多种实际电子器件,如碳纳米管、石墨烯纳米带、金属纳米线和分子电子器件。描述了使用k点采样方法对涉及量子点接触的系统的量子电导现象以及单个分子与金属电极接触的I - V曲线。