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Domain wall creep in epitaxial ferroelectric Pb(Zr(0.2)Ti(0.08)O(3) thin films.外延铁电Pb(Zr(0.2)Ti(0.08)O(3)薄膜中的畴壁蠕动
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近理想表面上铁电材料的本征单畴切换

Intrinsic single-domain switching in ferroelectric materials on a nearly ideal surface.

作者信息

Kalinin S V, Rodriguez B J, Jesse S, Chu Y H, Zhao T, Ramesh R, Choudhury S, Chen L Q, Eliseev E A, Morozovska A N

机构信息

Materials Science and Technology Division and Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA.

出版信息

Proc Natl Acad Sci U S A. 2007 Dec 18;104(51):20204-9. doi: 10.1073/pnas.0709316104. Epub 2007 Dec 12.

DOI:10.1073/pnas.0709316104
PMID:18077335
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC2154409/
Abstract

Ferroelectric domain nucleation and growth in multiferroic BiFeO(3) is studied on a single-domain level by using piezoresponse force spectroscopy. Variation of local electromechanical response with dc tip bias is used to determine the size of the domain formed below the conductive scanning probe tip. The domain parameters are calculated self-consistently from the decoupled Green function theory by using tip geometry determined from the domain wall profile. The critical parameters of the nucleating domain and the activation energy for nucleation are determined. The switching mechanism is modeled by using the phase-field method, and comparison with experimental results shows that the nucleation biases are within a factor of approximately 2 of the intrinsic thermodynamic limit. The role of atomic-scale defects and long-range elastic fields on nucleation bias lowering is discussed. These measurements open a pathway for quantitative studies of the role of a single defect on kinetics and thermodynamics of first order bias-induced phase transitions and electrochemical reactions.

摘要

通过使用压电响应力谱在单畴水平上研究了多铁性BiFeO₃中铁电畴的成核与生长。利用直流针尖偏压下局部机电响应的变化来确定在导电扫描探针针尖下方形成的畴的尺寸。通过使用从畴壁轮廓确定的针尖几何形状,从解耦格林函数理论自洽地计算畴参数。确定了成核畴的临界参数和成核活化能。使用相场方法对开关机制进行建模,与实验结果的比较表明,成核偏压在固有热力学极限的约2倍范围内。讨论了原子尺度缺陷和长程弹性场对降低成核偏压的作用。这些测量为定量研究单个缺陷在一级偏压诱导的相变和电化学反应的动力学和热力学中的作用开辟了一条途径。