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用于高性能非易失性存储器应用的无铅铁电体在HfO2/Si(100)上的集成。

Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications.

作者信息

Kundu Souvik, Maurya Deepam, Clavel Michael, Zhou Yuan, Halder Nripendra N, Hudait Mantu K, Banerji Pallab, Priya Shashank

机构信息

Center for Energy Harvesting Materials and Systems (CEHMS), Department of Mechanical Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA.

Advanced Devices &Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA.

出版信息

Sci Rep. 2015 Feb 16;5:8494. doi: 10.1038/srep08494.

DOI:10.1038/srep08494
PMID:25683062
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4329549/
Abstract

We introduce a novel lead-free ferroelectric thin film (1-x)BaTiO3-xBa(Cu1/3Nb2/3)O3 (x = 0.025) (BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) applications. Piezoelectric force microscopy (PFM), x-ray diffraction, and high resolution transmission electron microscopy were employed to establish the ferroelectricity in BT-BCN thin films. PFM study reveals that the domains reversal occurs with 180° phase change by applying external voltage, demonstrating its effectiveness for NVM device applications. X-ray photoelectron microscopy was used to investigate the band alignments between atomic layer deposited HfO2 and pulsed laser deposited BT-BCN films. Programming and erasing operations were explained on the basis of band-alignments. The structure offers large memory window, low leakage current, and high and low capacitance values that were easily distinguishable even after ~10(6) s, indicating strong charge storage potential. This study explains a new approach towards the realization of ferroelectric based memory devices integrated on Si platform and also opens up a new possibility to embed the system within current complementary metal-oxide-semiconductor processing technology.

摘要

我们介绍了一种新型无铅铁电薄膜(1-x)BaTiO3-xBa(Cu1/3Nb2/3)O3 (x = 0.025)(BT-BCN)，该薄膜集成在HfO2缓冲的Si上，用于非易失性存储器(NVM)应用。采用压电力显微镜(PFM)、X射线衍射和高分辨率透射电子显微镜来确定BT-BCN薄膜中的铁电性。PFM研究表明，通过施加外部电压，畴反转以180°相变发生，证明了其在NVM器件应用中的有效性。利用X射线光电子显微镜研究了原子层沉积的HfO2与脉冲激光沉积的BT-BCN薄膜之间的能带对准。基于能带对准解释了编程和擦除操作。该结构提供了大的存储窗口、低漏电流以及高低电容值，即使在约10(6) s后也易于区分，表明其具有强大的电荷存储潜力。这项研究解释了一种在Si平台上实现基于铁电的存储器件的新方法，也为将该系统嵌入当前的互补金属氧化物半导体加工技术开辟了新的可能性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/85f4/4329549/8e74edf5f2e7/srep08494-f9.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/85f4/4329549/31bdb2e79ea9/srep08494-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/85f4/4329549/804d1aea8542/srep08494-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/85f4/4329549/0853e65ecb78/srep08494-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/85f4/4329549/073432ed1be4/srep08494-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/85f4/4329549/e1a9084c007c/srep08494-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/85f4/4329549/39ecd19d6055/srep08494-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/85f4/4329549/6d0d190347c1/srep08494-f7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/85f4/4329549/f897848138ec/srep08494-f8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/85f4/4329549/8e74edf5f2e7/srep08494-f9.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/85f4/4329549/31bdb2e79ea9/srep08494-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/85f4/4329549/804d1aea8542/srep08494-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/85f4/4329549/0853e65ecb78/srep08494-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/85f4/4329549/073432ed1be4/srep08494-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/85f4/4329549/e1a9084c007c/srep08494-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/85f4/4329549/39ecd19d6055/srep08494-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/85f4/4329549/6d0d190347c1/srep08494-f7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/85f4/4329549/f897848138ec/srep08494-f8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/85f4/4329549/8e74edf5f2e7/srep08494-f9.jpg

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