Kummer R, Hecht C, Winnacker A
Opt Lett. 1997 Jun 15;22(12):916-8. doi: 10.1364/ol.22.000916.
Persistent spectral-hole burning was performed in the gamma line of V(4+) in the wide-gap semiconductor 6HSiC. Spectral holes burned at 11 K were stable to temperatures of at least 320 K for several days. The hole-burning mechanism consists of two-step photoionization of V(4+) (self-gated spectral-hole burning). The spectral holes could be erased optically, either by pumping of electrons back from stable traps or, presumably, by a charge-transfer transition from the valence band to the V(5+) ions.
在宽带隙半导体6HSiC中，对V(4+)的γ线进行了持续光谱烧孔实验。在11K下烧出的光谱孔在至少320K的温度下稳定了几天。烧孔机制由V(4+)的两步光电离组成（自门控光谱烧孔）。光谱孔可以通过将电子从稳定陷阱中泵回，或者大概通过从价带到V(5+)离子的电荷转移跃迁，进行光学擦除。
