含硅化物的中红外线栅偏振器。

Mid-infrared wire-grid polarizer with silicides.

作者信息

Yamada Itsunari, Kintaka Kenji, Nishii Junji, Akioka Satoshi, Yamagishi Yutaka, Saito Mitsunori

机构信息

Department of Electronics and Informatics, Ryukoku University, Seta, Otsu, Japan.

出版信息

Opt Lett. 2008 Feb 1;33(3):258-60. doi: 10.1364/ol.33.000258.

DOI:10.1364/ol.33.000258

PMID:18246147

Abstract

An infrared (IR) polarizer with tungsten silicide (WSi) wire grid was fabricated by two-beam interference exposure and reactive ion etching. To enhance TM transmittance, silicon monoxide was deposited between the WSi wire grid (400 nm period) and a Si substrate. The transmittance was over 80% in the 4-5 microm wavelength range. The ratio of TM and TE transmittances was over 100 (20 dB) in the 2.5-6 microm wavelength range. The fabricated polarizer has higher durability and better compatibility with microfabrication processes compared with conventional IR polarizers.

摘要

采用双光束干涉曝光和反应离子刻蚀技术制备了带有硅化钨（WSi）线栅的红外（IR）偏振器。为提高TM透射率，在WSi线栅（周期为400 nm）和硅衬底之间沉积了一氧化硅。在4 - 5微米波长范围内，透射率超过80%。在2.5 - 6微米波长范围内，TM和TE透射率之比超过100（20 dB）。与传统红外偏振器相比，所制备的偏振器具有更高的耐久性和与微加工工艺更好的兼容性。