Yamada Itsunari, Kintaka Kenji, Nishii Junji, Akioka Satoshi, Yamagishi Yutaka, Saito Mitsunori
Department of Electronics and Informatics, Ryukoku University, Seta, Otsu, Japan.
Opt Lett. 2008 Feb 1;33(3):258-60. doi: 10.1364/ol.33.000258.
An infrared (IR) polarizer with tungsten silicide (WSi) wire grid was fabricated by two-beam interference exposure and reactive ion etching. To enhance TM transmittance, silicon monoxide was deposited between the WSi wire grid (400 nm period) and a Si substrate. The transmittance was over 80% in the 4-5 microm wavelength range. The ratio of TM and TE transmittances was over 100 (20 dB) in the 2.5-6 microm wavelength range. The fabricated polarizer has higher durability and better compatibility with microfabrication processes compared with conventional IR polarizers.
采用双光束干涉曝光和反应离子刻蚀技术制备了带有硅化钨（WSi）线栅的红外（IR）偏振器。为提高TM透射率，在WSi线栅（周期为400 nm）和硅衬底之间沉积了一氧化硅。在4 - 5微米波长范围内，透射率超过80%。在2.5 - 6微米波长范围内，TM和TE透射率之比超过100（20 dB）。与传统红外偏振器相比，所制备的偏振器具有更高的耐久性和与微加工工艺更好的兼容性。
