Sun Haijian, Liu Huiling, Ma Jun, Wang Xiangyu, Wang Bin, Han Lei
School of Municipal & Environmental Engineering, Harbin Institute of Technology, Harbin, China.
J Hazard Mater. 2008 Aug 15;156(1-3):552-9. doi: 10.1016/j.jhazmat.2007.12.087. Epub 2008 Jan 3.
Sulfur-doped TiO(2)/Ti photoelectrodes were prepared by anodization and characterized by SEM, AFM, XRD, XPS, UV-vis and SPS. The results of investigation indicated that S(4+) and S(6+) were dispersed on the surface of TiO(2) nanoparticles. The doping with an appropriate amount of sulfur expanded the response range of TiO(2)/Ti photoelectrodes to visible light, and enhanced the separation of photoinduced electrons from cavities. The photoelectrocatalytic performance test run with sulfur-doped TiO(2)/Ti photoelectrodes under Xenon light indicated that Na(2)SO(3) concentration of 750 mg/L and voltage of 160 V were the optimal conditions for preparation of sulfur-doped TiO(2)/Ti photoelectrodes.
通过阳极氧化法制备了硫掺杂的TiO(2)/Ti光电极，并采用扫描电子显微镜（SEM）、原子力显微镜（AFM）、X射线衍射仪（XRD）、X射线光电子能谱仪（XPS）、紫外可见分光光度计（UV-vis）和表面光电压谱仪（SPS）对其进行了表征。研究结果表明，S(4+)和S(6+)分散在TiO(2)纳米颗粒表面。适量硫的掺杂扩展了TiO(2)/Ti光电极对可见光的响应范围，并增强了光生电子与空穴的分离。在氙灯下对硫掺杂的TiO(2)/Ti光电极进行的光电催化性能测试表明，750 mg/L的Na(2)SO(3)浓度和160 V的电压是制备硫掺杂的TiO(2)/Ti光电极的最佳条件。
